FQB50N06 Datasheet, MOSFET, Fairchild Semiconductor

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FQB50N06 Features and benefits

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* 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche .

FQB50N06 Application

such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operat.

FQB50N06 Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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